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Effect of CHF3/Ar Gas Flow Ratio on Self-masking Subwavelength Structures Prepared on Fused Silica S
Based on an advanced technology, randomly-aligned subwavelength structures (SWSs) were obtained by a metal-nanodot-induc......
基于4H-SiC材料的微机电系统(MEMS)器件(如压力传感器、微波功率半导体器件等)在制造过程中,需要利用干法刻蚀技术对4H-SiC材料进行微加......
实验研制了针对波长248 nm KrF准分子激光的零级抑制石英相位掩模器。用双层掩蔽和图形转移技术,在双面抛光的石英基片上以CHF3/O2......
探索利用反应离子刻蚀 ( RIE)和湿法腐蚀 Si1-x Gex 合金材料的工艺条件。对两种腐蚀方法的利弊进行了对比 ,找出腐蚀 Si1-x Gex ......